Gallium Nitride (GaN) high-electron-mobility transistors (HEMT) – MEV Elektronik GmbH
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Category: Gallium Nitride (GaN) high-electron-mobility transistors (HEMT)

Partner/Manufacturer

Partner/Manufacturer

Blocking Voltage

Blocking Voltage
  • 650V (18)
  • 100V (6)
  • 40V (6)
  • 700V (3)
  • 150V (2)

Current Rating

Current Rating
  • 10A (4)
  • 17A (4)
  • 6A (4)
  • 11.5A (3)
  • 3.3A (2)
  • 5A (2)
  • 0.8A (1)
  • 12.2A (1)
  • 125A (1)
  • 130A (1)

RDS(ON) at 25°C

RDS(ON) at 25°C
  • 106Ω (4)
  • 165Ω (4)
  • 270Ω (4)
  • 138Ω (3)
  • 365Ω (2)
  • 470Ω (2)
  • 0.9Ω (1)
  • 1.2Ω (1)
  • 1.4Ω (1)
  • 1600Ω (1)
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Gallium Nitride (GaN) high-electron-mobility transistors (HEMT)

Showing 1–12 of 35 results

  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040FQ012A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040FQ015A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040FQ043A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040W048A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040W080A

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  • 1.2 x 1.7

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040W120A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100FQ016A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100FQ025A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100W027A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100W032A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100W070A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN150FQ032A

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