Gallium Nitride (GaN) high-electron-mobility transistors (HEMT) – Page 3 – MEV Elektronik GmbH
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Category: Gallium Nitride (GaN) high-electron-mobility transistors (HEMT)

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Partner/Manufacturer

Blocking Voltage

Blocking Voltage
  • 1200V (32)
  • 650V (21)
  • 900V (8)
  • 1000V (4)
  • 1700V (4)

Current Rating

Current Rating
  • 22A (7)
  • 32A (5)
  • 17A (4)
  • 35A (4)
  • 49A (3)
  • 63A (3)
  • 100A (2)
  • 115A (2)
  • 120A (2)
  • 21A (2)

RDS(ON) at 25°C

RDS(ON) at 25°C
  • 120Ω (9)
  • 45Ω (8)
  • 75Ω (7)
  • 60Ω (6)
  • 160Ω (5)
  • 40Ω (5)
  • 21Ω (4)
  • 25Ω (4)
  • 65Ω (4)
  • 16Ω (3)

Package Type

Package Type
  • TO-247-3 (23)
  • TO-247-4 (20)
  • TO-263-7 (15)
  • TOLL (4)
  • TO-243-3 (2)
  • TO-247-4 Plus package (2)
  • TO-243-4 (1)
  • TO247-3 (1)
  • TO263-7 (1)
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Gallium Nitride (GaN) high-electron-mobility transistors (HEMT)

Showing 25–35 of 35 results

  • Wafer

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN650N140A

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  • Wafer

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN650N190A

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  • Wafer

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN650N240A

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  • Wafer

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN650N2K2A

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  • Wafer

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN650N350A

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  • Wafer

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN650N500A

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  • Wafer

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN650N600A

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  • DFN 5x6

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN700DC140A

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  • DFN 5x6

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN700DC240A

    Read more
  • DFN 5x6

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN700DC350A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    ISG3201

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