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Category: Gallium Nitride (GaN) high-electron-mobility transistors (HEMT)

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Partner/Manufacturer

Blocking Voltage

Blocking Voltage
  • 1200 (11)
  • 900 (6)
  • 650 (5)
  • 1000 (4)
  • 1700 (2)

Current Rating

Current Rating
  • 36 (4)
  • 11 (3)
  • 120 (2)
  • 22 (2)
  • 23 (2)
  • 30 (2)
  • 32 (2)
  • (2)
  • 115 (1)
  • 18 (1)

RDS(ON) at 25°C

RDS(ON) at 25°C
  • 120 (4)
  • 65 (4)
  • 280 (3)
  • 60 (3)
  • 75 (3)
  • 1000 (2)
  • 15 (2)
  • 16 (1)
  • 160 (1)
  • 25 (1)

Gallium Nitride (GaN) high-electron-mobility transistors (HEMT)

Showing 1–12 of 35 results

  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040FQ012A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040FQ015A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040FQ043A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040W048A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040W080A

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  • 1.2 x 1.7

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040W120A

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  • Placeholder

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100FQ016A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100FQ025A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100W027A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100W032A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100W070A

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  • Placeholder

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN150FQ032A

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