Gallium Nitride (GaN) high-electron-mobility transistors (HEMT) – MEV Elektronik GmbH
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Category: Gallium Nitride (GaN) high-electron-mobility transistors (HEMT)

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  • 650V (44)
  • 1200V (25)
  • 600V (20)
  • 1700V (3)

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Current Rating
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  • 20A (14)
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  • 4A (7)
  • 16A (5)
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  • 3A (4)
  • 15A (3)

Package Type

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  • TO-220-2 (26)
  • TO-252-2 (19)
  • TO-247-3 (18)
  • TO-247-2 (10)
  • TO-263-2 (9)
  • TO-220-F2 (4)
  • QFN (3)
  • TO-220 Isolated (3)
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Gallium Nitride (GaN) high-electron-mobility transistors (HEMT)

Showing 1–12 of 35 results

  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040FQ012A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040FQ015A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040FQ043A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040W048A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040W080A

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  • 1.2 x 1.7

    Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN040W120A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100FQ016A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100FQ025A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100W027A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100W032A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN100W070A

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  • Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

    INN150FQ032A

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