ATEK584P4 is a GaN MMIC 2.5W power amplifier operating from 2 to 6 GHz while providing 25dB of small signal gain.
The ATEK584P4 amplifier delivers 2.5W of output power at 30% PAE across the operating frequency range with an +18dBm RF input power applied.
Amplifier housed in compact 4x4mm SMD package, input and output matched to 50 ohms internally.
Evaluation Board, bare die, custom package, and module options are available upon request.
| Parameter | Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|
| Frequency Range | 2 | 6 | GHz | ||
| Output Power (18 dBm Input Power) | 2 GHz | 32.3 | dB | ||
| 4 GHz | 33.9 | dB | |||
| 6 GHz | 33.7 | dB | |||
| Small Signal Gain | 2 GHz | 26.4 | dB | ||
| 4 GHz | 25.2 | dB | |||
| 6 GHz | 22.5 | dB | |||
| Input Return Loss | -17 | dB | |||
| Output Return Loss | -12 | dB | |||
| Noise Figure | TBD | dB | |||
| Output IP3 | TBD | dBm | |||
| Drain Voltage (Vdd) | 20 | 25 | 32 | dBm | |
| Gate Voltage (Vgg Adjust the gate voltage between -4V and -1V to achieve an IDQ = 40mA typical) | -2.1 | V | |||
| Quiescent Current (Idq) | 40 | mA | |||
| PAE | 30 | % | |||
| Operating Temperature | -40 | 85 | °C |

GaN PA, 120W, Dc – 3 GHz