The ARF1001C7 is a two stage Monolithic Microwave Integrated Circuit (MMIC) power amplifier. The operating frequency ranges from 8.0 to 11 GHz. The saturated pulsed output power is 38 dBm and the signal gain is 24 dB.
This power amplifier is made in proven and robust GaAs pHEMT technology and optical gate lithography is used to ensure high repeatability and uniformity. At the backside of the bare die MMIC, via holes and gold metallisation are applied to allow for an easy conductive epoxy die attach process.
This device is well suited for test and measurement equipment, various radar applications, satellite communications and Point to Point radios.
The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.
| Frequency (GHz) | Gain (dB) | Psat (dBm) | P1db (dBm) | Power Supply
(+V) | (mA) |
Package |
| 8 – 11 | 25 | 37 | 36 | -5/8 | 1450 |
Ceramic 7×7 mm
|
