ARF9000 | Core-Chip 8 – 12 GHz – MEV Elektronik GmbH
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ARF9000 | Core-Chip 8 – 12 GHz

Altum RF ARF9000

Core-Chip 8 – 12 GHz

Description

The ARF9000 is a multi function Monolithic Microwave Integrated Circuit (MMIC) Core-Chip. It contains a 3-port, half duplex RX/TX switching mode. In both states, the signal can be attenuated in 31 steps of 0.9 dB each, or shifted in phase in 63 steps of 5.625 degrees per step. The control logic is of a parallel data input type to guarantee high speed switching operation. The common path contains inter-stage amplifiers for correct signal levelling. The dedicated RX LNA has a NF of 5 dB and a linear gain of 20 dB. The TX output is driven by an MPA with 23 dB gain and +23 dBm output power (P1dB). The operating frequency ranges from 8.0 to 12.0 GHz.

This Core-Chip is made in proven and robust GaAs pHEMT technology and optical gate lithography is used to ensure high repeatability and uniformity. At the backside of the bare die MMIC, via holes and gold metallisation are applied to allow for an easy conductive epoxy die attach process.
This device is best suited for X-band phased array radar applications, weather monitoring radars or active antennas for satellite communication.

Technical Data

Specification

Frequency (GHz) Phase Shifter Range (Deg) # Bits Phase Shifter (dB) Attenuation Range (dB) # Bits Attenuator # Tx P1db (dBm) # Tx Gain (dB) # Rx NF (dB) # Rx Gain (dB) Package
8 – 12 354.4 6 28 5 23 23 5 20

Bare Die

 

 

 

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ARF9000 | Core-Chip 8 - 12 GHz

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